Description of learning outcomes for module
Transkrypt
Description of learning outcomes for module
Module name: Electronic Devices Academic year: Faculty of: 2013/2014 IES-1-206-s ECTS credits: 5 Computer Science, Electronics and Telecommunications Field of study: Study level: Code: Electronics and Telecommunications First-cycle studies Lecture language: English Specialty: - Form and type of study: Profile of education: Academic (A) Semester: 2 Course homepage: Responsible teacher: Dziurdzia Piotr ([email protected]) Academic teachers: Description of learning outcomes for module MLO code Student after module completion has the knowledge/ knows how to/is able to Connections with FLO Method of learning outcomes verification (form of completion) Social competence M_K001 Student understands the need and knows the possibilities of continuous traing, raising the competence of professional, personal and social skills. ES1A_K01 Test M_K002 Student is conscious of importance and understands the nontechnical aspects and implications of the engineering activities, including its impact on the enviroment, knows the responsibility of taken decisions. ES1A_K02 Test M_K003 Student is aware of the behaviours ina professional maner, compliances with the rules of proffesional ethics and respects for the diversity of views and cultures. ES1A_K03 Test Student can compile reports about semiconductor devices and to present the material orally and in writing in English. Student will be able to communicate and interact constructively with a person skilled in the art. ES1A_U01 Test Skills M_U001 1/5 Module card - Electronic Devices M_U002 SStudent has skills and ablities in conducuting experimental characterization of semiconductor devices. ES1A_U08 Test M_U003 Student can formulate models of semiconductor devices and elemental circuits with using these models and carry out basic calculations of electrical parameters ES1A_U09 Test M_U004 Student umie analizować i projektować układy pomiarowe parametrów podstawowych przyrządów półprzewodnikowych oraz przeprowadzać pomiary i opracowywać wyniki ES1A_U12 Test M_W001 An ability to utilize semicondcutor models to analyze carrier densities, carrier transport and recombination. ES1A_W01, ES1A_W02 Test M_W002 An ability to understand and utilize the basic governing equations to analyze semiconductor devices. ES1A_W07, ES1A_W12 Test M_W003 Knowledge and understanding account for functionality and design of discrete semiconductor devices ES1A_W09 Test M_W004 Knowledge and understanding account for basic parameters determining gain and high frequency properities of semiconductor devices. ES1A_W05 Test Knowledge FLO matrix in relation to forms of classes Practical classes - + - - - - - - - - M_K002 Student is conscious of importance and understands the nontechnical aspects and implications of the engineering activities, including its impact on the enviroment, knows the responsibility of taken decisions. + - + - - - - - - - - E-learning Seminar classes + Workshops Conversation seminar Student understands the need and knows the possibilities of continuous traing, raising the competence of professional, personal and social skills. Fieldwork classes Project classes M_K001 Others Laboratory classes Form of classes Auditorium classes Student after module completion has the knowledge/ knows how to/is able to Lectures MLO code Social competence 2/5 Module card - Electronic Devices M_K003 Student is aware of the behaviours ina professional maner, compliances with the rules of proffesional ethics and respects for the diversity of views and cultures. + - + - - - - - - - - M_U001 Student can compile reports about semiconductor devices and to present the material orally and in writing in English. Student will be able to communicate and interact constructively with a person skilled in the art. - - + - - - - - - - - M_U002 SStudent has skills and ablities in conducuting experimental characterization of semiconductor devices. + - + - - - - - - - - M_U003 Student can formulate models of semiconductor devices and elemental circuits with using these models and carry out basic calculations of electrical parameters + - + - - - - - - - - M_U004 Student umie analizować i projektować układy pomiarowe parametrów podstawowych przyrządów półprzewodnikowych oraz przeprowadzać pomiary i opracowywać wyniki - - - - - - - - - - - M_W001 An ability to utilize semicondcutor models to analyze carrier densities, carrier transport and recombination. + - - - - - - - - - - M_W002 An ability to understand and utilize the basic governing equations to analyze semiconductor devices. + - - - - - - - - - - M_W003 Knowledge and understanding account for functionality and design of discrete semiconductor devices + - + - - - - - - - - M_W004 Knowledge and understanding account for basic parameters determining gain and high frequency properities of semiconductor devices. - - - - - - - - - - - Skills Knowledge Module content 3/5 Module card - Electronic Devices Lectures Zajęcia w ramach modułu prowadzone są w postaci wykładu (30 godzin) oraz ćwiczeń laboratoryjnych (30 godzin). Lecture (15 weeks) Semiconductor Devices 1st week: Semiconductor materials, crystal structures, basic of quantum theory and band theory. Charge carriers’ properties, state and carrier distributions, equlibrium carrier concentration. 2nd week: Drift, diffusion, generation-recombination. Equations of state, minority carrier diffusion equation. 3rdweek: Fundamental processes in semiconductor device technology: rafination, monocrystallization, epitaxy, oxidation, photolitography, dopant diffusion and implantation. 4th week: Introduction to p-n junction theory: electrostatics; ideal p-n diode equation. Non-ideal diode description. DC voltage-current characteristics, temperature effects. Reverse bias transition capacitance. 5th week: Charge storage and transient behaviour. Real diode small- and large- signal models. Junction breakdown; Zener, tunnel and other special types of diodes. 6th week: Bipolar Junction Transistors (BJT); derivation of voltage-current and current gain expressions. Dc and ac models and equivalent circuits. Frequency response. 7th week: BJT as a switch, breakdown voltages. High power BJTs; cases and thermal resistance. 8th week: P-n-p-n structures: thyristors and triacs. UJT and PUT transistors. 9th week: Theory of Junction Field Effect Transistor (JFET); dc characteristics and ac preformance. 10th week: Metal-semiconductor junctions: Schottky diodes, nonrectifying contacts, tunneling. 11th week: MESFET’s junction structure on the GaAs and its frequency and power limitations. Enhancement MESFETs. 12th week: Two-terminal MOS structure, MOS capacitors, flatband and threshold voltages. 13th week: Static MOS transistor (MOSFET), its equivalent circuit, body effect. 14th week: Small signal parameters, equivalent circuit and frequency limitations of MOSFETs. 15th week: State-of-the-Art MOS technology (CMOSFET): small-geometry effects, mobility degradation and velocity saturation. MNOS memory cells. Laboratory classes Lab exercises DC characteristics of p+-n diodes Small-signal diode parameters Capacitance of the p-n junction. Switching of p-n diodes Zener and tunnel diodes Thermal parameters of p-n diodes Thyritors and triacs DC characteristics of bipolar junction transistors (BJT) Small-signal parameters of BJT Common emitter amplifier Switching of BJT’s Thermal resistance of BJT’s and power MOSFETs 4/5 Module card - Electronic Devices Field effect junction transistors (JFET’s) Metal-oxide-semiconductor field effect transiststors (MOSFET’s) Method of calculating the final grade 1.Warunkiem uzyskania pozytywnej oceny końcowej jest uzyskanie pozytywnej oceny z laboratorium oraz kolokwium zaliczeniowego z wykładu. 2.Obliczamy średnią ważoną z ocen z laboratorium (75%) i wykładów (25%) uzyskanych we wszystkich terminach. 3.Wyznaczmy ocenę końcową na podstawie zależności: if sr>4.75 then OK:=5.0 else if sr>4.25 then OK:=4.5 else if sr>3.75 then OK:=4.0 else if sr>3.25 then OK:=3.5 else OK:=3 4.Jeżeli pozytywną ocenę z laboratorium i zaliczenia wykładu uzyskano w pierwszym terminie i dodatkowo student był aktywny na wykładach, to ocena końcowa jest podnoszona o 0.5. Prerequisites and additional requirements ·Familiarity with calculus, ordinary differential equations ·Familiarity with the solid state physics ·Knowledge of electrostatic fields: its definiton, source and computation of its strenght with known charge distribution ·Knowledge of the electric circuit analysis Recommended literature and teaching resources 1. 2. 3. 4. 5. Yang E.S. – Microelectronic devices – McGraw Hill 1988 Sedra A.S, Smith K.C. – Microelectronic Circuits – Oxfor University Press 1998 Neamen D.A. – Semiconductor Physic and Devices 3rd ed. – Mc Graw Hill 2002 Sze S.M. – Semiconductor Devices: physics and technology, 2nd Edition – Wiley 2002 Razavi B. – Fundamentals of Microelectrinics, Wiley 2008 Scientific publications of module course instructors related to the topic of the module Additional scientific publications not specified Additional information None Student workload (ECTS credits balance) Student activity form Student workload Participation in lectures 30 h Realization of independently performed tasks 20 h Participation in laboratory classes 30 h Preparation of a report, presentation, written work, etc. 20 h Preparation for classes 30 h Summary student workload 130 h Module ECTS credits 5 ECTS 5/5