(M = Au, Pt) thin films prepared by pulsed laser deposition
Transkrypt
(M = Au, Pt) thin films prepared by pulsed laser deposition
AGNIESZKA KOPIA, WOJCIECH MAZIARZ Structural characterization and properties of M-WO3 (M = Au, Pt) thin films prepared by pulsed laser deposition INTRODUCTION A sensor for detecting and measuring gas concentrations should be characterized by appropriately high sensitivity, selectivity, a short response time and stability. These requirements led to a fast development of research on semiconductor-based gas sensors [1, 2]. The tungsten trioxide is the competition to others oxides compositions regarding low costs of production and high sensitivity in the presence of H2S, NOx, SO2. However, sensitivity of the sensor, its stability and working time highly depend on microstructure, thickness of film, grain size and grade of specific surface [3, 4]. M. Bendahan et al. [5] showed in their investigations, that using magnetron sputtering it is possible to obtain WO3 films sensitive to O3, however, the sensitivity depends on working temperature. WO3, Ag-WO3, Au-WO3 and Pt-WO3 films produced by means of magnetron sputtering method were investigated in the area of sensitivity and selectivity by M. Stankova et al. [6]. Authors showed that WO3 films coated with z 3÷4 nm layer of Au or Ag are sensitive to presence of H2S in CO2 at temperature T = 260°C, but not reacting when SO2 is present in CO2. F. Mitsuga et al. [7] produced WO3 films using laser ablation method and showed that the highest sensitivity to the presence of NOx presented films in the temperature 200°C. Investigations into the sensitivity of WO3, Au-WO3 and Pt-WO3 films produced with PLD method were done by H. Kawasaki et al. [8]. Authors observed sensitivity four times higher for Au-WO3 and Pt-WO3 films regarding pure WO3 at the temperature 300°C. In all the cases investigated WO3 films characterized high sensitivity to various gases at different temperature. These films properties allowed the temperature modulation and direct WO3 films to detection of specified gas to be applied. In our previous investigation [9] we described optimal production conditions of nanocrystalline WO3 films by means of laser ablation using Nd-YAG laser. Now we report the influence of the structure on the gas sensing properties in thin films M-WO3 (M = Au, Pt). ξ = 45°. Substrate and target were parallel. The deposition conditions were: a frequency of f = 10 Hz, energy density on the target ε = 7.8 J/cm2, substrate was heated at 650C, deposition time t = 30 min. Deposition films of the Au and Pt were on the thin films after PLD process using Sputter Coated K575X. The crystalline structure of the target and M-WO3 thin films were examined by means of the XRD (PANanalytical EMPYREAN DY 1061) with Cu K radiation in Bragg-Brentano and grazing geometry = 1°. The surface morphology of the films was observed by AFM (Veeco DIMENSION ICON-PT). The structure of the films was observed by TEM (JEOL JEM CX200). The resistance R of the M-WO3 thin films, in air, CO and NO2 atmosphere, was measured using the two terminal resistance methods. RESULTS AND DISCUSSION First, target phase composition and morphology were examined. A diffraction pattern of a target is presented in Figure 1. Only peaks originating from the WO3 phase were identified on the basis of the card number 04-007-1277 JCPDS. The microstructure from a laser beam passage is presented in Figure 2. Any cracks and melted places were not observed, which can suggested the wrong process parameters. The impact of process parameters of PLD on the structure of WO3 layers had been discussed before [9]. The next step was to produce a WO3 layer with a thin Au and Pt layers. The X-ray diffraction phase analysis in Grazing geometry (α = 1°) identified the presence of the WO3 phase (Fig. 3). The identification was based on the card No. 00-043-1035 JCPDS. Additional peak generated by gold (04-004-5106 JCPDS) was identified in AuWO3 X-ray patterns (Fig. 3a), while a peak generated by platinum (01-071-3756 JCPDS) was identified in Pt-WO3 thin films (Fig. 3b). On the basis of the Williamson-Hall plot it was found out EXPERIMENTAL STUDY Thin films were elaborated by PLD technique. Targets were initially prepared by compacting powders of WO3 under a pressure of 140 MPa during 5 min. Then the pellets were sintered at T = 1200°C for 2 hours. The WO3 thin films were deposited on [100] oriented Si substrates using laser ablation system Nd-YAG laser Continuum Powerlite DLS (maximum energy 2 J, = 266 nm, pulsed duration = 8 ns) with Neocera chamber. The characteristics of the deposition system were: a target-substrate distance of 70 mm, the oxygen pressure in the deposition camera – P = 5 Pa. The laser beam hits the target at an incidence angle ______________________________ Dr hab. inż. Agnieszka Kopia ([email protected]) – AGH-University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, Dr inż. Wojciech Maziarz – AGH-University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications Fig. 1. X-ray diffraction patterns of target WO3 Fig. 1. Dyfraktogram rentgenowski powierzchni tarczy WO3 154 _________________________ I N Ż Y N I E R I A M A T E R I A Ł O W A ___________________ ROK XXXV Fig. 2. SEM micrograph of target WO3 surface Rys. 2. Mikrofotografia SEM powierzchni tarczy WO3 Fig. 5 AFM three-dimensional images of 500 nm scans for: a) Au-WO3 and b) Pt-WO3 Rys. 5. Mikrofotografia powierzchni wykonana za pomocą AFM, skan 500 nm dla warstw: a) Au-WO3, b) Pt-WO3 Fig. 3. X-ray diffraction patterns for: a) Au-WO3, b) Pt-WO3 in Graizing α = 1° Rys. 3. Dyfraktogram rentgenowski warstw: a) Au-WO3, b) Pt-WO3 przy SKP α = 1° Fig. 4 Williamson-Hall plot for Pt-WO3 thin film Rys. 4. Wykres Williamson-Hall dla warstwy Pt-WO3 that the crystallites of WO3 were of 23±3 nm in size (Fig. 4). AFM examinations showed a very well developed surface of Pt-WO3 and Au-WO3 layers (Fig. 5). The size of grains on the surface of these layers fitted within the range from 20 to 30 nm. The observations of microstructure thin films on cross-sections were performed by means of transmission electron microscopy (Fig. 6, 7). Fig. 6 TEM cross sectional image of Pt-WO3 thin film: a) bright field and b) dark field Rys. 6 Mikrofotografia TEM przekroju warstwy Pt-WO3 w: a) polu jasnym, b) polu ciemnym Observations were performed both in the dark and light field. The thickness of the WO3 layer and of the platinum layer was determined on the basis of microphotographs. The obtained layers were of 180÷200 nm thick and they were characterised by columnshaped structure of 20÷50 nm wide columns grow from Nr 2/2014 ____________________ I N Ż Y N I E R I A M A T E R I A Ł O W A _________________________ 155 the substrate up. At the interface of the silicon substrate and the WO3 layer, one can see 4 nm thick, light and amorphous SiO2 layer. The presence of this layer hinders directional epitaxial growth films with the substrate orientation. The TEM microphotographs of the layers cross-section show a platinum layer. The Pt layer sputtered onto the WO3 layer is 15 nm thick. During sample preparation for TEM examinations, this layer got separated from the WO3 layer (Fig. 6). The presence of the Au layer on the surface of WO3 layers was confirmed by XRD examinations. However, no clear Au layer was observed during TEM examinations (Fig. 7). Next step was to measure resistance of Pt-WO3 and Au-WO3 layers in CO and NO2 atmospheres. Before measurements of electric properties, the layers surfaces were cleaned of adsorbed gases. The layers were annealed at the temperature of 450C for 12 h. Some problems with signal instability have been encountered in Au-WO3 layer what was probably caused by the contact phenomena. The correct results were obtained for the Pt-WO3 layer (Fig. 8, 9). The results of resistance for Pt-WO3 in CO and NO2 gases at temperature T = 250, 300°C are presented in Figures 8 and 9. The resistance of the layer increased at the moment of introducing NO2 into the atmosphere (Fig. 8). Inversely the resistance of the layer decreased at the moment of introducing CO atmosphere (Fig. 9). In the case of reduction of gases, for examples CO, reaction between CO particles and oxygen ions adsorbed on the surface thin films (O–(ads.)) takes place. As the results of this reaction the CO2 particles and free electrons (1) are formed [10]. The effect of this reaction is decrease in resistance in thin films, which is observed in Figure 9. O ads. CO CO 2 e before the analysis. This shows that layers surfaces get regenerated. The stronger signals for both gases were obtained at higher temperature T = 300°C. (1) The reaction time for both gases in Pt-WO3 is several seconds. When NO2 or CO inflow is cut off and the chamber is blown through with the air, the resistance returns to the value observed Fig. 7. TEM cross sectional image of Au-WO3 thin film: a) bright field and b) dark field Rys. 7. Mikrofotografia TEM przekroju warstwy Au-WO3 w: a) polu jasnym, b) polu ciemnym Fig. 8. Resistance of Pt-WO3 thin film in NO2 atmosphere at temperature: a) 250°C, b) 300°C Rys. 8. Rezystancja cienkiej warstwy Pt-WO3 w atmosferze NO2 w temperaturze a) 250°C, b) 300°C Fig. 9. Resistance of Pt-WO3 thin film in CO atmosphere at temperature a) 250°C, b) 300°C Rys. 9 Rezystancja cienkiej warstwy Pt-WO3 w atmosferze, CO w temperaturz:e a) 250°C, b) 300°C 156 _________________________ I N Ż Y N I E R I A M A T E R I A Ł O W A ___________________ ROK XXXV CONCLUSIONS The M-WO3 (M-Au, Pt) thin films were produced by PLD method for gas sensor application. Structure characterisation was the first step. The X-ray diffraction phase analysis in grazing geometry identified the presence of the WO3, Au and Pt phases, respectively. On the basis of the Williamson-Hall plot we calculated crystallites size of WO3 which were of 23±3 nm in size. Highly developed layer surface was observed in AFM microscope. The TEM crosssection observation of the layers showed column-shaped structure of 20÷50 nm in the width. The resistance measurements R of the Pt-WO3 thin film, in air, CO and NO2 atmospheres showed stronger signals for both gases (NO2, CO) at higher temperature T = 300°C. So fine crystalline structure, highly developed layer surface and the presence of platinum on the surface showed that the film is sensitive to CO and NO2 and the layers surfaces get regenerated. ACKNOWLEGMENTS This work was financially supported by the Ministry of Science and Higher Education through the projects No. 11.11.110.936. REFERENCES [2] Chmielowska M., Kopia A., Leroux Ch., Saitzek S., Kusiński J., Gavarri J. R.: Structural and catalytic properties of thin films of CuOx-CeO2–x deposited by laser ablation. Solid State Phenomena 99100 (2004) 235÷238. [3] Kopia A., Kowalski K., Chmielowska M., Leroux Ch.: Electron microscopy and spectroscopy investigationsof CuOx-CeO2_d/Si thin films. Surface Science 602 (2008) 1313÷1321. [4] Chmielowska M., Villain S., Kopia A., Dallas J. P., Kusinski J., Gavarri J. R., Leroux Ch.: Ce1−xNdxO2−δ/Si thin films obtained by pulsed laser deposition: Microstructure and conduction properties. Thin Solid Films 516 (2008) 3747÷3754. [5] Bendahan M., Guerin J., Boulmani R., Aguir K.: WO3 sensor response according to operating temperature: experiment and modeling. Sensors and Actuators B 124 (2007) 24÷29. [6] Stankova M., Vilanova X., Llobet E., Calderer J., Vinaixa M., Gracia I., Cane X. C.: On-line monitoring of CO2 quality using doped WO3 thin film sensors. Thin Solid Films 500 (2006) 302÷308. [7] Mitsugi F., Hiraiwa E., Ikegami T., Ebihara K.: Pulsed laser deposited WO3 thin films for gas sensor. Surface and Coatings Technology 169 (2003) 553÷556. [8] Kawasaki H., Ueda T., Suda Y., Ohshima T.: Properties of metal doped tungsten oxide thin films for NOx gas sensors grown by PLD method combined with sputtering process. Sensors and Actuators B 100 (2004) 266÷269. [9] Kopia A.: Microstructure investigation in thin films WO3 produced by pulsed laser deposition. Solid State Phenomena 186 (2012) 164÷167. [10] Kopia A.: Cienkie warstwy półprzewodnikowe o właściwościach katalitycznych. Wydawnictwa AGH, Kraków (2011). 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