SKKT 106, SKKT 106B, SKKH 106

SKKT 106, SKKT 106B, SKKH 106
®
SEMIPACK 1
Thyristor / Diode Modules
/0.1
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SKKT 106B
SKKH 106
Features
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Typical Applications
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Symbol
Conditions
Values
Units
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SKKH
09-03-2004 NOS
© by SEMIKRON
SKKT 106, SKKT 106B, SKKH 106
Fig. 1L Power dissipation per thyristor vs. on-state current
Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2L Power dissipation per module vs. rms current
Fig. 2R Power dissipation per module vs. case temp.
Fig. 3L Power dissipation of two modules vs. direct current
Fig. 3R Power dissipation of two modules vs. case temp.
2
09-03-2004 NOS
© by SEMIKRON
SKKT 106, SKKT 106B, SKKH 106
Fig. 4L Power dissipation of three modules vs. direct and rms current
Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease
Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics
Fig. 8 Surge overload current vs. time
3
09-03-2004 NOS
© by SEMIKRON
SKKT 106, SKKT 106B, SKKH 106
Fig. 9 Gate trigger characteristics
Dimensions in mm
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
09-03-2004 NOS
© by SEMIKRON