Power MOSFET IRF840, SiHF840

Transkrypt

IRF840, SiHF840
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
500
RDS(on) (Ω)
VGS = 10 V
RoHS*
Qg (Max.) (nC)
63
• Fast Switching
Qgs (nC)
9.3
• Ease of Paralleling
32
• Simple Drive Requirements
Qgd (nC)
Configuration
Single
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
G
D
COMPLIANT
• Compliant to RoHS Directive 2002/95/EC
D
G
Available
• Repetitive Avalanche Rated
0.85
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF840PbF
SiHF840-E3
IRF840
SiHF840
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
UNIT
8.0
5.1
A
IDM
32
1.0
W/°C
EAS
510
mJ
Currenta
IAR
8.0
A
Repetitive Avalanche Energya
EAR
13
mJ
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
125
W
dV/dt
3.5
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12).
c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91070
S11-0506-Rev. C, 21-Mar-11
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1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF840, SiHF840
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.78
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
Gate-Source Threshold Voltage
ID = 4.8 Ab
μA
-
-
0.85
Ω
gfs
VDS = 50 V, ID = 4.8 Ab
4.9
-
-
S
Input Capacitance
Ciss
VGS = 0 V,
-
1300
-
Output Capacitance
Coss
VDS = 25 V,
-
310
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
-
120
-
Total Gate Charge
Qg
-
-
63
Gate-Source Charge
Qgs
-
-
9.3
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 10 V
Dynamic
VGS = 10 V
ID = 8 A, VDS = 400 V,
see fig. 6 and 13b
pF
nC
Gate-Drain Charge
Qgd
-
-
32
Turn-On Delay Time
td(on)
-
14
-
-
23
-
-
49
-
-
20
-
-
4.5
-
-
7.5
-
-
-
8.0
-
-
32
-
-
2.0
V
-
460
970
ns
-
4.2
8.9
μC
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VDD = 250 V, ID = 8 A
Rg = 9.1 Ω, RD = 31 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 8 A, VGS = 0 Vb
TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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S11-0506-Rev. C, 21-Mar-11
IRF840, SiHF840
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VGS
101
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
100
25 °C
100
20 µs Pulse Width
VDS = 50 V
20 µs Pulse Width
TC = 25 °C
100
101
4
VDS, Drain-to-Source Voltage (V)
91070_01
ID, Drain Current (A)
4.5 V
100
20 µs Pulse Width
TC = 150 °C
100
91070_02
101
91070_04
Fig. 2 - Typical Output Characteristics, TC = 150 °C
6
7
8
9
10
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
5
VGS, Gate-to-Source Voltage (V)
91070_03
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
150 °C
101
Top
3.0
2.5
ID = 8.0 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
S11-0506-Rev. C, 21-Mar-11
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3
IRF840, SiHF840
2500
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
2000
Ciss
1500
1000
Coss
500
Crss
101
VGS, Gate-to-Source Voltage (V)
VDS = 400 V
VDS = 100 V
8
4
For test circuit
see figure 13
0
15
30
45
60
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
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4
1.4
1.2
10 µs
2
10
100 µs
5
1 ms
2
1
10 ms
5
TC = 25 °C
TJ = 150 °C
Single Pulse
2
0.1
0.1
75
QG, Total Gate Charge (nC)
1.0
Operation in this area limited
by RDS(on)
5
VDS = 250 V
0.8
VSD, Source-to-Drain Voltage (V)
102
16
12
0.6
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 8.0 A
91070_06
VGS = 0 V
91070_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
0
25 °C
0.4
20
150 °C
101
100
0
100
91070_05
ISD, Reverse Drain Current (A)
Vishay Siliconix
91070_08
2
5
1
2
5
10
2
5
102
2
5
103
2
5
104
Fig. 8 - Maximum Safe Operating Area
S11-0506-Rev. C, 21-Mar-11
IRF840, SiHF840
Vishay Siliconix
RD
VDS
VGS
8.0
D.U.T.
RG
6.0
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
4.0
Fig. 10a - Switching Time Test Circuit
2.0
VDS
90 %
0.0
25
50
75
100
125
150
TC, Case Temperature (°C)
91070_09
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
0 - 0.5
0.2
0.1 0.1
0.05
0.02
0.01
PDM
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-3
10-5
91070_11
10-4
10-3
10-2
0.1
1
10
102
t1, Rectangular Pulse Duration (S)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S11-0506-Rev. C, 21-Mar-11
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5
IRF840, SiHF840
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T.
RG
+
-
IAS
V DD
VDS
10 V
0.01 Ω
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
1200
ID
3.6 A
5.1 A
Bottom 8.0 A
Top
1000
800
600
400
200
0
VDD = 50 V
25
91070_12c
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
+
QGD
VG
D.U.T.
-
VDS
VGS
3 mA
Charge
Fig. 13a - Basic Gate Charge Waveform
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6
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
S11-0506-Rev. C, 21-Mar-11
IRF840, SiHF840
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91070.
S11-0506-Rev. C, 21-Mar-11
www.vishay.com
7
Package Information
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
*M
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
0.055
F
1.14
1.40
0.045
H(1)
6.09
6.48
0.240
0.255
J(1)
2.41
2.92
0.095
0.115
0.552
L
13.35
14.02
0.526
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: X10-0416-Rev. M, 01-Nov-10
DWG: 5471
b(1)
L
INCHES
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
Revison: 01-Nov-10
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
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Revision: 11-Mar-11
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