2SJ281 - TV SAT ELECTRONIC

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l Ordering number: EN 4243A.
2SJ281
No.4243A
P-Channel MOS Silieon FET
V ery High-Speec:l
Switching Applications
Features
· Low ON resistance.
· Very high-speed switching.
· Low-voltage drive.
Absolu te Maximum Ratings at Ta= 25°C
Drain to Source Voltage
Voss
Gate to Source Voltage
Vass
Drain Current(DC)
lo
lop
Drain Current(Pulse)
Po
Allowable Power Dissipation
PW;'i; 10ps, duty cycle;'i; 1%
Tc=25°C
T ch
Tstg
Channel Temperature
Storage Temperature
Electrical Characteristics at Ta= 25°C
D-S Breakdown Voltage
V(BR)OSS
G-S Breakdown Voltage
V(BR)GSS
Ioss
Zero Gate Voltage
[ Drain Current
Gate to Source Leakage Current IGss
CutoffVoltage
VGS<om
Forwarci Transfer Adrnitlance
l Yrs l
Static Drain to Source
Ros(on)
[ on State Resistance
Ciss
Input Capacitance
Co s s
Output Capacitance
Crss
Reverse Transfer Capacitance
Package Dimensions 2083A
(unit: mm)
65
lo= -JmA,Vas=O
la= ±100pA,Vos=O
Vos= -250V,Vas=O
VGs= ±25V,Vos=O
Vos= -10V,Io= -1mA
Vos= -10V,I 0 = -1.5A
lo= -1.5A,Vas= -10V
Vos=- 20V,f= 1MHz
Vos=- 20V,f= 1MHz
Vos=- 20V,f= 1MHz
-250
±30
-3
-12
1.0
30
150
-55 to+ 150
min
-250
±30
-1.5
1.5
unit
V
V
A
A
w
w
c
c
o
o
typ max
-100
unit
V
V
pA
±10
-2.5
pA
V
2.0
n
2.5
1.5
s
420
pF
pF
100
pF
40
Continued on next page.
Package Dimensions 2092A
(unit: mm)
23
A~
~
~
5
~
__.J.
~o
"',..;.
o.a s-
'-
.li..
G
~
~r.:
D
10
0
G: Gate
D : Drain
S : Source
S
e~~jl
l
-
'·
~
n
[) :
G :Gutl:
Druin
.
2.3-·l-1+-+1·~•2.3
SANYO : TP-F A
S : Sourc1~
SANYO: TP
SAN YO Electric Co .. Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg ,1-10,1 Chome. Ueno. Ta1to-ku. TOKYO, 110 JAPAN
02093TH (KOTO) BX-0706 No.4243-1/3
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2SJ281
Continued from preceding page.
Turn-ON Delay Time
RiseTime
Turn-OFF Delay Time
Fali Time
Diode Forward Voltage
min
typ max
14
18
See specified Test Circuit.
td(on)
t,
75
td(om
65
tr
Vso
Is= -3A,Vas=O
-1.0 -1.5
unit
ns
ns
ns
ns
V
Switching Time Test Circuit
Voo--1oov
Io--1.5A
V1n
RL"'66,70
PW•10"a
o.c. :;,
1"
V ouT
• Yos- -!OV
)J'/
-'S
~:;i/ ~
<
l
-.
c-4
~
c~
o
c
·;
3.5V
o"
_,
-8
-'12
-16
-2
1
3.0V
2.5V
oo
-w
Drain to Source Voltage,V 05 - V
"'l
l Y!s l -
o
o
~
~~
1....-::
~
-2
~
-3
Ros(on)
lo
_,
-
-s
-·
VGs
3. 4
yos= -IOV
~
-1
.,l
l
Gate to Source Voltage,Vas- V
Tc-25°C
lo= -1.5A
c:
l 3.o
Je
2
'W
,;'
-
~ 3
it~::::" r.
v 1'
6
2
6
E:/
i'-
4
1
5
-1.0
Drain Current,l n - A
-10
1.oo
_,
-e
-12
-16
-20
-24
Gate to Source Voliage,Vas- V
N o.4243-2/3
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www.tvsat.com.pl
2SJ281
RDs(on) -
Ciss, Coss, Crss -
Te
3.0
l 2.5
r2~ 2.0
o~ •"
Jl~
./
B~ 1.5
c
'jjj
'a
Ciss
l
\"\
\'-.
\
/
/
·;.:l,_o
Ci .s
1!XXl
/
V
lMHz
f
lo=-1.5A
Vas= -lOV
c:
a>
VDs
\.
l'
Co ss
........
-~s
~"'
.."!
c 0.5
<no
Crss
10
~80
o
·40
80
40
120
o
160
-20
Case Temperature,Tc - °C
SWTime - ID
2
.....,
r--...
5
-60
-80
-100
-
V
Dra in to Source Voltage,V08
-
V
J
..-tl_
V
1--
7
_,0
Drain to Source Voltage, V 08
,l
-
l''m
-t,
2
o
,l
~(on)
Voo= -lOOV
Vas= -IOV
5
0.1
' '
-1.0
·10
Dr3.in Current,I 0
PD -
1.2
-
A
Ta
"'
"'
l
o1.0
o.
""" "
c
:3 0.8
'c."
~ 0.6
~
o
"
3
28
4
o
~q.
•
~
PD -
32
~
""
"'-~'
0.4
•
:0
~o. 2
_g
'""-
<
20
40
60
80
100
120
""'
Ambient Temperature,Ta - °C
•
f'\..
160
20
40
60
Te
"' """
80
""" ""' f'\.
100
120
140
160
Case Temperature,Tc- °C
No products described or eontainad herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power eontroi systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of whioh may directly or indirectly cause injury, death ar property lass.
• Anyone purchasing any products described ar eontainad herein for an above-mentioned use shall:
CD Accept fuli responsibility and indemnify and defend SANYO ELEOTRIO 00., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
@ Not impose any responsibility for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly ar severally.
• lnformation (including c'1rcuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made ar implied regarding its use ar any infringements of intellectual property rights ar other rights of
third parties.
N o.4243-3/3
this material copyrighted by its respective manufacturer