Description of learning outcomes for module

Module name:
Electronic Devices
Academic year:
Faculty of:
2013/2014
IES-1-206-s
ECTS credits:
5
Computer Science, Electronics and Telecommunications
Field of study:
Study level:
Code:
Electronics and Telecommunications
First-cycle studies
Lecture language:
English
Specialty: -
Form and type of study:
Profile of education:
Academic (A)
Semester:
2
Course homepage:
Responsible teacher:
Dziurdzia Piotr ([email protected])
Academic teachers:
Description of learning outcomes for module
MLO code
Student after module completion has the
knowledge/ knows how to/is able to
Connections with
FLO
Method of learning
outcomes verification
(form of completion)
Social competence
M_K001
Student understands the need and knows the
possibilities of continuous traing, raising the
competence of professional, personal and social
skills.
ES1A_K01
Test
M_K002
Student is conscious of importance and
understands the nontechnical aspects and
implications of the engineering activities,
including its impact on the enviroment, knows the
responsibility of taken decisions.
ES1A_K02
Test
M_K003
Student is aware of the behaviours ina
professional maner, compliances with the rules of
proffesional ethics and respects for the diversity
of views and cultures.
ES1A_K03
Test
Student can compile reports about semiconductor
devices and to present the material orally and in
writing in English. Student will be able to
communicate and interact constructively with a
person skilled in the art.
ES1A_U01
Test
Skills
M_U001
1/5
Module card - Electronic Devices
M_U002
SStudent has skills and ablities in conducuting
experimental characterization of semiconductor
devices.
ES1A_U08
Test
M_U003
Student can formulate models of semiconductor
devices and elemental circuits with using these
models and carry out basic calculations of
electrical parameters
ES1A_U09
Test
M_U004
Student umie analizować i projektować układy
pomiarowe parametrów podstawowych
przyrządów półprzewodnikowych oraz
przeprowadzać pomiary i opracowywać wyniki
ES1A_U12
Test
M_W001
An ability to utilize semicondcutor models to
analyze carrier densities, carrier transport and
recombination.
ES1A_W01,
ES1A_W02
Test
M_W002
An ability to understand and utilize the basic
governing equations to analyze semiconductor
devices.
ES1A_W07,
ES1A_W12
Test
M_W003
Knowledge and understanding account for
functionality and design of discrete
semiconductor devices
ES1A_W09
Test
M_W004
Knowledge and understanding account for basic
parameters determining gain and high frequency
properities of semiconductor devices.
ES1A_W05
Test
Knowledge
FLO matrix in relation to forms of classes
Practical
classes
-
+
-
-
-
-
-
-
-
-
M_K002
Student is conscious of
importance and understands
the nontechnical aspects and
implications of the
engineering activities,
including its impact on the
enviroment, knows the
responsibility of taken
decisions.
+
-
+
-
-
-
-
-
-
-
-
E-learning
Seminar
classes
+
Workshops
Conversation
seminar
Student understands the
need and knows the
possibilities of continuous
traing, raising the
competence of professional,
personal and social skills.
Fieldwork
classes
Project
classes
M_K001
Others
Laboratory
classes
Form of classes
Auditorium
classes
Student after module
completion has the
knowledge/ knows how to/is
able to
Lectures
MLO code
Social competence
2/5
Module card - Electronic Devices
M_K003
Student is aware of the
behaviours ina professional
maner, compliances with the
rules of proffesional ethics
and respects for the diversity
of views and cultures.
+
-
+
-
-
-
-
-
-
-
-
M_U001
Student can compile reports
about semiconductor devices
and to present the material
orally and in writing in
English. Student will be able
to communicate and interact
constructively with a person
skilled in the art.
-
-
+
-
-
-
-
-
-
-
-
M_U002
SStudent has skills and
ablities in conducuting
experimental characterization
of semiconductor devices.
+
-
+
-
-
-
-
-
-
-
-
M_U003
Student can formulate
models of semiconductor
devices and elemental
circuits with using these
models and carry out basic
calculations of electrical
parameters
+
-
+
-
-
-
-
-
-
-
-
M_U004
Student umie analizować i
projektować układy
pomiarowe parametrów
podstawowych przyrządów
półprzewodnikowych oraz
przeprowadzać pomiary i
opracowywać wyniki
-
-
-
-
-
-
-
-
-
-
-
M_W001
An ability to utilize
semicondcutor models to
analyze carrier densities,
carrier transport and
recombination.
+
-
-
-
-
-
-
-
-
-
-
M_W002
An ability to understand and
utilize the basic governing
equations to analyze
semiconductor devices.
+
-
-
-
-
-
-
-
-
-
-
M_W003
Knowledge and
understanding account for
functionality and design of
discrete semiconductor
devices
+
-
+
-
-
-
-
-
-
-
-
M_W004
Knowledge and
understanding account for
basic parameters determining
gain and high frequency
properities of semiconductor
devices.
-
-
-
-
-
-
-
-
-
-
-
Skills
Knowledge
Module content
3/5
Module card - Electronic Devices
Lectures
Zajęcia w ramach modułu prowadzone są w postaci wykładu (30 godzin) oraz ćwiczeń
laboratoryjnych (30 godzin).
Lecture (15 weeks)
Semiconductor Devices
1st week: Semiconductor materials, crystal structures, basic of quantum theory and
band theory.
Charge carriers’ properties, state and carrier distributions, equlibrium carrier
concentration.
2nd week: Drift, diffusion, generation-recombination. Equations of state, minority
carrier diffusion equation.
3rdweek: Fundamental processes in semiconductor device technology: rafination,
monocrystallization, epitaxy, oxidation, photolitography, dopant diffusion and
implantation.
4th week: Introduction to p-n junction theory: electrostatics; ideal p-n diode equation.
Non-ideal diode description. DC voltage-current characteristics, temperature effects.
Reverse bias transition capacitance.
5th week: Charge storage and transient behaviour. Real diode small- and large- signal
models. Junction breakdown; Zener, tunnel and other special types of diodes.
6th week: Bipolar Junction Transistors (BJT); derivation of voltage-current and current
gain expressions. Dc and ac models and equivalent circuits. Frequency response.
7th week: BJT as a switch, breakdown voltages. High power BJTs; cases and thermal
resistance.
8th week: P-n-p-n structures: thyristors and triacs. UJT and PUT transistors.
9th week: Theory of Junction Field Effect Transistor (JFET); dc characteristics and ac
preformance.
10th week: Metal-semiconductor junctions: Schottky diodes, nonrectifying contacts,
tunneling.
11th week: MESFET’s junction structure on the GaAs and its frequency and power
limitations. Enhancement MESFETs.
12th week: Two-terminal MOS structure, MOS capacitors, flatband and threshold
voltages.
13th week: Static MOS transistor (MOSFET), its equivalent circuit, body effect.
14th week: Small signal parameters, equivalent circuit and frequency limitations of
MOSFETs.
15th week: State-of-the-Art MOS technology (CMOSFET): small-geometry effects,
mobility degradation and velocity saturation. MNOS memory cells.
Laboratory classes
Lab exercises
DC characteristics of p+-n diodes
Small-signal diode parameters
Capacitance of the p­-n junction.
Switching of p-n diodes
Zener and tunnel diodes
Thermal parameters of p-n diodes
Thyritors and triacs
DC characteristics of bipolar junction transistors (BJT)
Small-signal parameters of BJT
Common emitter amplifier
Switching of BJT’s
Thermal resistance of BJT’s and power MOSFETs
4/5
Module card - Electronic Devices
Field effect junction transistors (JFET’s)
Metal-oxide-semiconductor field effect transiststors (MOSFET’s)
Method of calculating the final grade
1.Warunkiem uzyskania pozytywnej oceny końcowej jest uzyskanie pozytywnej oceny z laboratorium
oraz kolokwium zaliczeniowego z wykładu.
2.Obliczamy średnią ważoną z ocen z laboratorium (75%) i wykładów (25%) uzyskanych we wszystkich
terminach.
3.Wyznaczmy ocenę końcową na podstawie zależności:
if sr>4.75 then OK:=5.0 else
if sr>4.25 then OK:=4.5 else
if sr>3.75 then OK:=4.0 else
if sr>3.25 then OK:=3.5 else OK:=3
4.Jeżeli pozytywną ocenę z laboratorium i zaliczenia wykładu uzyskano w pierwszym terminie i
dodatkowo student był aktywny na wykładach, to ocena końcowa jest podnoszona o 0.5.
Prerequisites and additional requirements
·Familiarity with calculus, ordinary differential equations
·Familiarity with the solid state physics
·Knowledge of electrostatic fields: its definiton, source and computation of its strenght with known
charge distribution
·Knowledge of the electric circuit analysis
Recommended literature and teaching resources
1.
2.
3.
4.
5.
Yang E.S. – Microelectronic devices – McGraw Hill 1988
Sedra A.S, Smith K.C. – Microelectronic Circuits – Oxfor University Press 1998
Neamen D.A. – Semiconductor Physic and Devices 3rd ed. – Mc Graw Hill 2002
Sze S.M. – Semiconductor Devices: physics and technology, 2nd Edition – Wiley 2002
Razavi B. – Fundamentals of Microelectrinics, Wiley 2008
Scientific publications of module course instructors related to the topic of
the module
Additional scientific publications not specified
Additional information
None
Student workload (ECTS credits balance)
Student activity form
Student workload
Participation in lectures
30 h
Realization of independently performed tasks
20 h
Participation in laboratory classes
30 h
Preparation of a report, presentation, written work, etc.
20 h
Preparation for classes
30 h
Summary student workload
130 h
Module ECTS credits
5 ECTS
5/5